POSITRONENVERNICHTUNGSEXPERIMENTE AN ELEKTRONEN- UND NEUTRONENBESTRAHLTEM KUPFER UND ALUMINIUM. = EXPERIENCES D'ANNIHILATION DE POSITONS DANS LE CUIVRE ET L'ALUMINIUM IRRADIES PAR ELECTRONS ET NEUTRONSMANTL S.1976; BER. KERNFORSCH.-ANLAGE JUELICH; DTSCH.; DA. 1976; NO 1359; PP. 1-50; ABS. ANGL.; BIBL. 4 P.Serial Issue

POSITRON ANNIHILATION STUDIES ON AN ELECTRON IRRADIATED CU-30 AT % ZN ALLOYPOERSCHKE R; MANTL S.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 1; PP. 61-63; BIBL. 17 REF.Article

DIRECT EVIDENCE FOR VACANCY CLUSTERING IN ELECTRON-IRRADIATED COPPER BY POSITRON ANNIHILATIONMANTL S; TRIFTSHAUSER W.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 25; PP. 1554-1557; BIBL. 21 REF.Article

POSITION ANNIHILATION STUDIES ON ELECTRON- AND ALPHA -PARTICLE-IRRADIATED 75 NI 13 CR 12 FE ALLOYSMANTL S; SHARMA BD; ANTESBERGER G et al.1979; PHILOS. MAG., A; GBR; DA. 1979; VOL. 39; NO 4; PP. 389-397; BIBL. 16 REF.Article

INTERACTION OF HYDROGEN AND VACANCIES IN COPPER INVESTIGATED BY POSITRON ANNIHILATIONLENGELER B; MANTL S; TRIFTSHAUSER W et al.1978; J. PHYS. F; GBR; DA. 1978; VOL. 8; NO 8; PP. 1691-1698; BIBL. 21 REF.Article

Ion beam synthesis of epitaxial silicides : fabrication, characterization and applicationsMANTL, S.Materials science reports. 1992, Vol 8, Num 1-2, pp 1-95, issn 0920-2307Serial Issue

THE TRACER DIFFUSION OF GE IN NI SINGLE CRYSTALS = LA DIFFUSION DE TRACEUR DE GE DANS DES MONOCRISTAUX DE NIMANTL S; ROTHMAN SJ; NOWICKI LJ et al.1983; JOURNAL OF PHYSICS F: METAL PHYSICS; ISSN 0305-4608; GBR; DA. 1983; VOL. 13; NO 7; PP. 1441-1448; BIBL. 26 REF.Article

STUDY OF METALLIC GLASSES BY MEASURING THE DOPPLER BROADENING OF THE POSITRON ANNIHILATION GAMMA -RADIATION AND THE ELECTRICAL RESISTIVITYKAJCSOS Z; WINTER J; MANTL S et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. 77-82; ABS. GER; BIBL. 11 REF.Article

ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON CRYSTALSFUHS W; HOLZHAUER U; MANTL S et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 1; PP. 69-75; ABS. GER; BIBL. 19 REF.Article

Interdiffusion and thermally induced strain relaxation in strained Si_1-xGe_x/Si superlatticesHOLLÄNDER, B; BUTZ, R; MANTL, S et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 11, pp 6975-6981, issn 0163-1829Article

Ion scattering studies of strained Si/Si_1-^xGe_x superlatticesHOLLAÊNDER, B; MANTL, S; STRITZKER, B et al.Superlattices and microstructures. 1991, Vol 9, Num 4, pp 415-420, issn 0749-6036, 6 p.Article

Diffusion of iron in aluminium studied by Mössbauer spectroscopy = Diffusion du fer dans l'aluminium étudié par spectroscopie MössbauerMANTL, S; PETRY, W; SCHROEDER, K et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 9, pp 5313-5331, issn 0163-1829Article

An Improved Si Tunnel Field Effect Transistor With a Buried Strained Si_1―xGe_x SourceZHAO, Q. T; HARTMANN, J. M; MANTL, S et al.IEEE electron device letters. 2011, Vol 32, Num 11, pp 1480-1482, issn 0741-3106, 3 p.Article

The influence of the substrate temperature on the formation of buried epitaxial CoSi₂ by ion implantationRADERMACHER, K; MANTL, S; KOHLHOF, K et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1049-1051, issn 0042-207X, 3 p.Conference Paper

Improved carrier injection in ultrathin-body SOI schottky-barrier MOSFETsZHANG, M; KNOCH, J; APPENZELLER, Joerg et al.IEEE electron device letters. 2007, Vol 28, Num 3, pp 223-225, issn 0741-3106, 3 p.Article

MBE growth and characterization of buried silicon oxide films on Si(100)HACKE, M; BAY, H. L; MANTL, S et al.Thin solid films. 1996, Vol 280, Num 1-2, pp 107-111, issn 0040-6090Article

Electron transport of inhomogeneous α-FeSi₂(111)Si Schottky barriersRADERMACHER, K; SCHÜPPEN, A; MANTL, S et al.Solid-state electronics. 1994, Vol 37, Num 3, pp 443-449, issn 0038-1101Article

External infrared reflection absorption spectroscopy of methanol on an epitaxially grown Si(100)2×1 surfaceEHRLEY, W; BUTZ, R; MANTL, S et al.Surface science. 1991, Vol 248, Num 1-2, pp 193-200, issn 0039-6028, 8 p.Article

Ion beam mixing of Ti/Si-layers = Mixage ionique des couches Ti/SiKOHLHOF, K; MANTL, S; STRITZKER, B et al.Le Vide, les couches minces. 1987, Vol 42, Num 236, pp 129-131, issn 0223-4335Conference Paper

Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contactsKNOCH, J; MANTL, S; APPENZELLER, J et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 73-76, issn 0038-1101, 4 p.Article

Lattice location and hardness of Ta-implanted Ni₃AlWAS, G. S; MANTL, S; OLIVER, W et al.Journal of materials research. 1991, Vol 6, Num 6, pp 1200-1206, issn 0884-2914Article

Diffusion of ⁶⁰Co in (Co_0.8Fe_0.2)₃V alloys in the ordered and disordered states = Diffusion de ⁶⁰Co dans des alliages (Co_0,8Fe_0,2)₃V dans les états ordonné et désordonnéMANTL, S; ROTHMAN, S. J; NOWICKI, L. J et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 50, Num 5, pp 591-602, issn 0141-8610Article

Molecular beam epitaxy of Ru₂Si₃ on siliconLENSSEN, D; LENK, S; BAY, H. L et al.Thin solid films. 2000, Vol 371, Num 1-2, pp 66-71, issn 0040-6090Article

Annealing of silicon implanted by a high dose of cobalt ions investigated by in situ x-ray diffractionMÜLLER, M; BAHR, D; PRESS, W et al.Journal of applied physics. 1993, Vol 74, Num 3, pp 1590-1596, issn 0021-8979Article

Modification of β-FeSi₂ precipitate layers in silicon by hydrogen implantationSCHULLER, B; CARIUS, R; MANTL, S et al.Microelectronic engineering. 2001, Vol 55, Num 1-4, pp 219-225, issn 0167-9317Conference Paper